Growth of lateral graphene/h-BN heterostructure on copper foils by chemical vapor deposition
Sources：nanopure | Release date：
2018-11-30
| Browsing volume：
Key words:Growth of lateral graphene/h-BN heterostructure on copper foils by chemical vapor deposition
With its atomically smooth surface yet no dangling bond, chemical inertness and high temperature sustainability, the insulating hexagonal boron nitride (h-BN) can be an ideal substrate for two-dimensional (2D) material growth and device measurement. In this review, research progress on the chemical growth of 2D materials on h-BN has been summarized, such as chemical vapor deposition and molecular beam epitaxy of graphene and various transition
metal dichalcogenides. Further, stacking of the as-grown 2D materials relative to h-BN, thermal expansion matching between the deposited materials and h-BN, electrical property of 2D materials on h-BN have been discussed in detail.
Share to:
Relevant articles
- 2020-09-24 > Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111)
- 2020-09-24 > Hexagonal Boron Nitride as a Multifunctional Support for Engineering Efficient Electrocatalysts toward the Oxygen Reduction Reaction
- 2020-08-21 > Boron nitride nanotubes and nanosheets
- 2020-08-21 > A comprehensive analysis of the CVD growth of boron nitride nanotubes
- 2020-06-13 > One-dimensional hexagonal boron nitride conducting channel
- 2020-06-13 > Metal-Free Modified Boron Nitride for Enhanced CO2 Capture
- 2020-06-13 > Functionalizations of boron nitride nanostructures
- 2020-06-13 > Engineering spin defects in hexagonal boron nitride
- 2020-06-13 > Grain Dependent Growth of Bright Quantum Emitters in Hexagonal Boron Nitride
- 2020-06-13 > Process for manufacturing boron nitride agglomerates
Related products
-
Hexagonal Boron Nitride (h-BN) -
H-BN nano-sheets (NS-BN) -
H-BN Spheres (S-BN) -
H-BN Aggregates (Agg-BN)