Wafer-scale single-crystal hexagonal boron nitride film via self-collimated grain formation
Although polycrystalline hexagonal boron nitride (PC-hBN) has been realized, defects and grain boundaries still cause charge scatterings and trap sites, impeding high-performance electronics. Here, we report a method of synthesizing wafer-scale single-crystalline hBN (SC-hBN) monolayer films by chemical vapor deposition. The limited solubility of boron (B) and nitrogen (N) atoms in liquid gold promotes high diffusion of adatoms on the surface of liquid at high temperature to provoke the circular hBN grains. These further evolve into closely packed unimodal grains by means of self-collimation of B and N edges inherited by electrostatic interaction between grains, eventually forming an SC-hBN film on a wafer scale. This SC-hBN film also allows for the synthesis of wafer-scale graphene/hBN heterostructure and single-crystalline tungsten disulfide.
- 2020-09-24 > Wafer-scale single-crystal hexagonal boron nitride monolayers on Cu (111)
- 2020-09-24 > Hexagonal Boron Nitride as a Multifunctional Support for Engineering Efficient Electrocatalysts toward the Oxygen Reduction Reaction
- 2020-08-21 > Boron nitride nanotubes and nanosheets
- 2020-08-21 > A comprehensive analysis of the CVD growth of boron nitride nanotubes
- 2020-06-13 > One-dimensional hexagonal boron nitride conducting channel
- 2020-06-13 > Metal-Free Modified Boron Nitride for Enhanced CO2 Capture
- 2020-06-13 > Functionalizations of boron nitride nanostructures
- 2020-06-13 > Engineering spin defects in hexagonal boron nitride
- 2020-06-13 > Grain Dependent Growth of Bright Quantum Emitters in Hexagonal Boron Nitride
- 2020-06-13 > Process for manufacturing boron nitride agglomerates
-
Hexagonal Boron Nitride (h-BN) -
H-BN nano-sheets (NS-BN) -
H-BN Spheres (S-BN) -
H-BN Aggregates (Agg-BN)